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| (R) STGP20NB37LZ N-CHANNEL CLAMPED 20A TO-220 INTERNALLY CLAMPED PowerMESHTM IGBT PRELIMINARY DATA TYPE STGP20NB37LZ s s s s s V CES CLAMPED V CE(s at) < 2.0 V IC 20 A POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP HIGH CURRENT CAPABILITY HIGH VOLTAGE CLAMPING FEATURE 3 1 2 DESCRIPTION Using the latest high voltage technology based on patented strip layout, STMicroelectronics has designed an advanced family of IGBTs with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection. APPLICATIONS s AUTOMOTIVE IGNITION TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V CES V ECR V GE IC IC I CM (*) E AS P tot E SD T s tg Tj April 2000 Parameter Collector-Emitter Voltage (V GS = 0) Reverse Battery Protection Gate-Emitter Voltage Collector Current (continuous) at Tc = 25 o C Collector Current (continuous) at Tc = 100 o C Collector Current (pulsed) Single Pulse Energy Tc = 25 o C T otal Dissipation at Tc = 25 o C Derating Factor ESD (Human Body Model) Storage Temperature Max. O perating Junction Temperature Value CLAMPED 20 CLAMPED 40 30 80 700 150 1 4 -65 to 175 175 Un it V V V A A A mJ W W /o C KV o o C C 1/6 (*) Pulse width limited by safe operating area STGP20NB37LZ THERMAL DATA R thj -case R thj -amb R thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Max Max T yp 1 62.5 0.2 o o C/W C/W o C/W ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified) OFF Symbo l BV (CES) Parameter Clamped Voltage I C =2mA I C =2mA I C =2mA I C = 75 mA I G = 2 mA V CE = 15 V V CE = 200 V V GE = 10 V V GE = 0 T C = 150 o C V GE = 0 T C = 150 oC V CE = 0 300 10 660 15 Test Con ditions V GE = 0 V GE = 0 V GE = 0 T C = - 40 C T C = 25 o C o T C = 150 C TC = 25 o C o Min. 380 375 370 20 12 Typ. 405 400 395 28 14 Max. 430 425 420 Unit V V V V BV (ECR) BV GE I CES IGES RGE Emitter Collector Break-down Voltage Gate Emitter Break-down Voltage Collector cut-off Current (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Gate Emitter Resistanc e 16 10 100 1000 30 V A A A K ON () Symbo l V GE(th) Parameter Gate Threshold Voltage Collector-Emitt er Saturation Voltage Test Con ditions V CE = V GE IC = 250A V CE = V GE IC = 250A V CE = V GE IC = 250A V GE V GE V GE V GE = = = = 4.5 4.5 4.5 4.5 V V V V IC IC IC IC = = = = 10 10 20 20 A A A A T C = - 40 C o T C = 25 C o T C = 150 C T C = 25 o C T C= 150 o C T C = 25 o C T C= 150 o C o Min. 1.2 1.0 0.6 Typ. 1.4 1.1 1.0 1.35 1.25 Max. 2 1.8 1.7 2.0 2.0 Unit V V V V V V V V CE(SAT ) DYNAMIC Symbo l gf s C i es C o es C res QG Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Charge Test Con ditions V CE = 25 V V CE = 25 V f = 1 MHz I C = 20 A V GE = 0 Min. Typ. 35 2300 165 28 51 Max. Unit S pF pF pF nC V CE = 280 V IC = 20 A V GE = 5 V 2/6 STGP20NB37LZ FUNCTIONAL CHARACTERISTICS Symbo l II U.I. S. Parameter Latching Current Functional Test Open Secondary Coil Test Con ditions V CLAMP = 250 V R GOF F = 1 K R GOF F=1 K L =3 mH R GOF F=1 K L =3 mH V GE = 4.5 V TC = 150 o C T C = 25 o C TC = 150 o C Min. 80 21.6 15 26 18 Typ. Max. Unit A A A SWITCHING ON Symbo l t d(on) tr (di/dt) on Eo n Parameter Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Con ditions V CC = 250 V V GE = 4.5 V V CC = 250 V R G = 1 K V CC =250V I C =20A R G =1 K V GE =4.5V I C = 20 A R G = 1 K I C = 20 A V GE = 4.5 V T C = 25 o C TC = 150 o C Min. Typ. 2.3 0.6 550 8.8 9.2 Max. Unit s s A/s mJ mJ SWITCHING OFF Symbo l tc t r (v off ) tf td (o ff ) E o ff(**) tc t r (v off ) tf td (o ff ) E o ff(**) Parameter Test Con ditions I C = 20 A V GE = 4.5 V Min. Typ. 4.8 2.6 2.0 11.5 11.8 7.8 3.5 3.9 12.0 17.8 Max. Unit s s s s mJ s s s s mJ Cross-O ver Time V CC = 250 V Off Voltage Rise Time R GE = 1 K Fall T ime Off Voltage Delay Time Turn-off Switching Loss Cross-O ver Time V CC = 250 V Off Voltage Rise Time R GE = 1 K Fall T ime T C = 150 oC Off Voltage Delay Time Turn-off Switching Loss I C = 20 A V GE = 4.5 V (*) Pulse width limited by safe operating area (*) Pulsed: Pulse duration = 300 ms, duty cycle 1.5 % (**)Losses Include Also The Tail (jedec Standardization) 3/6 STGP20NB37LZ Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And DIode Recovery Times 4/6 STGP20NB37LZ TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 E mm TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 MIN. 0.173 0.048 0.094 4.40 1.23 2.40 inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151 A C D1 L2 F1 D G1 Dia. F2 F L5 L7 L6 L9 L4 G H2 P011C 5/6 STGP20NB37LZ Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6 |
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